V-shaped sige recess volume trim for improved device performance and layout dependence

A method of forming a semiconductor device, comprising:

• etching a substrate to produce a recess having curved sidewalls;
• implanting a bottom surface of the recess with a dopant to form an etch stop layer along the bottom surface;
• etching the recess to form a source/drain recess, wherein the etch stop layer resists etching;
• and
• forming a stress-inducing material on the etch stop layer within the source/drain recess.

A semiconductor device, comprising:

• a source region and a drain region comprising a stress-inducing material arranged within a substrate;
• an etch stop layer arranged along lower surfaces of the source region and the drain region, wherein the source region and the drain region have angled sidewalls that directly contact opposing sidewalls of the etch stop layer symmetrically;
• and
• a gate structure arranged over the substrate at a location that is between the source region and the drain region.