Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWEI-CHE TSAI, HSIN-HUNG CHEN
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Abstract
A semiconductor device includes a gate structure on a substrate; a protection layer on the gate structure; a source/drain region adjacent to the gate structure; and an interconnect plug on the source/drain region. The gate structure includes a gate electrode including a top surface; and a sidewall spacer interfacing a sidewall of the gate electrode. The protection layer covers at least a first portion of the top surface and the sidewall spacer. The protection layer is interposed between the interconnect plug and the gate electrode.
Claims21
A semiconductor device, comprising:
- a gate structure on a substrate, wherein the gate structure comprises:
- a gate electrode including a top surface;
- and
- a sidewall spacer interfacing a sidewall of the gate electrode;
- a protection layer on the gate structure, wherein the protection layer covers at least a first portion of the top surface and the sidewall spacer;
- a source/drain region adjacent to the gate structure;
- and
- an interconnect plug on the source/drain region,
- wherein the protection layer is interposed between the interconnect plug and the gate electrode.
A semiconductor device, comprising:
- a gate structure located on a substrate, wherein the gate structure comprises a conductive portion and a sidewall spacer;
- an interconnect plug over the substrate, wherein the interconnect plug is surrounded by a dielectric layer;
- and
- an etch stop layer at least partially conformal to the gate structure,
- wherein the etch stop layer comprises a material different from that of the dielectric layer or the sidewall spacer,
- and the interconnect plug is in contact with the etch stop layer.
17-20. (canceled)
Dependencies are inferred from the claim text.