Method of making a finfet device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hao Wang, Ching-Wei Tsai, Chin-Chi Wang
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Abstract
A device includes a first fin including a first semiconductor material. A first dielectric layer is disposed over a top surface of the first fin. A sidewall of the first dielectric layer has a dip-shape profile. A second dielectric layer is disposed along sidewalls of the first fin. A top surface of the second dielectric layer is substantially coplanar with the top surface of the first fin. A second fin includes a second semiconductor material different from the first semiconductor material. An isolation region is disposed between the first fin and the second fin.
Claims20
A device comprising:
- a first fin including a first semiconductor material;
- a first dielectric layer disposed over a top surface of the first fin, wherein a sidewall of the first dielectric layer has a dip-shape profile;
- a second dielectric layer disposed along sidewalls of the first fin, wherein a top surface of the second dielectric layer is substantially coplanar with the top surface of the first fin;
- a second fin including a second semiconductor material different from the first semiconductor material;
- and
- a first isolation region disposed between the first fin and the second fin.
A device comprising:
- a first fin including a first semiconductor material;
- a first dielectric layer disposed over a top surface of the first fin;
- and
- a second fin including a second semiconductor material, wherein a top surface of the second fin is substantially coplanar with a top surface of the first dielectric layer.
A device comprising:
- a first fin including a first semiconductor material and having a first height;
- a second fin including a bottom portion of the first semiconductor material and a top portion of a second semiconductor material different from the first semiconductor material, wherein the second fin has a second height greater than the first height;
- a third fin including a bottom portion of the first semiconductor material and a top portion of a third semiconductor material different from the first and second semiconductor materials, wherein the third fin has a third height greater than the first height;
- and
- isolation regions disposed between the first fin, the second fin, and the third fin.
Dependencies are inferred from the claim text.