Ldd-free semiconductor structure and manufacturing method of the same

A lightly doped drain-free (LDD-free) semiconductor structure, comprising:

• a semiconductor fin;
• a gate over the semiconductor fin;
• and
• a regrowth region made of semiconductor material positioned in the semiconductor fin, and the regrowth region forms a source region or a drain region of the LDD-free semiconductor structure;
• wherein the LDD-free semiconductor structure is a FinFET, the gate comprises a gate electrode layer laterally covered by a gate spacer, and the regrowth region extends towards a region beneath the gate spacer and close to a plane extending along a junction of the gate spacer and the gate electrode layer.

A method for manufacturing a lightly doped drain-free (LDD-free) semiconductor structure, comprising:

• forming a gate over a semiconductor layer;
• removing a portion of the semiconductor layer and obtaining a recess;
• and
• forming a regrowth region over the recess;
• wherein the gate comprises a gate electrode layer laterally covered by a gate spacer, and the regrowth region extends towards a region beneath the gate spacer and close to a plane extending along a junction of the gate spacer and the gate electrode layer.