Display device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAtsushi UMEZAKI, Hajime KIMURA
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAtsushi UMEZAKI, Hajime KIMURA
Estimating the term…
A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of on/off of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/μm (1×10−18 A/μm) or less. Therefore, the drive capability of the semiconductor device can be improved.
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A circuit comprising:
A semiconductor device comprising:
A circuit comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.