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US 2016/0254266 A1Published application
Capacitor structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Hsueh YANG, Chung-Chiang MIN, Chang-Ming WU, Shih-Chang LIU
Life of this patent
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Abstract
A capacitor structure includes a deep trench, a contact plug, a spacer and a metal-insulator-metal film. The deep trench extends into a crown oxide substrate, and the contact plug is disposed entirely below the crown oxide substrate. The spacer lines the deep trench, and the metal-insulator-metal film is disposed in the deep trench.
Claims21
A capacitor structure comprising:
- a deep trench extending into a crown oxide;
- a contact plug disposed entirely below the crown oxide;
- a spacer lining the deep trench;
- and
- a metal-insulator-metal film disposed in the deep trench.
2 more elements
A memory device comprising:
- a semiconductor substrate having a dynamic random access memory (DRAM) device;
- an etch stop layer over the DRAM device;
- a crown oxide over the etch stop layer;
- a deep trench extending into the crown oxide, the deep trench comprising first and second sidewalls and a bottom;
- a spacer lining the first and second sidewalls of the deep trench;
- and
- a metal-insulator-metal film disposed in the deep trench.
4 more elements
14-20. (canceled)
Dependencies are inferred from the claim text.