Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device having a first semiconductor element provided in a first region in a semiconductor substrate, and a second semiconductor element provided in a second region in the semiconductor substrate, the method comprising:

• preparing a light ion source, a first mask and a second mask;
• shielding a side of the first region on a top surface of the semiconductor substrate by using the first mask;
• irradiating the top surface of the semiconductor substrate, the side of the first region thereon being shielded with the first mask, with light ions by operating the light ion source to introduce lattice defects at a specified depth on a side of the second region on the top surface of the semiconductor substrate;
• shielding the side of the second region on a bottom surface of the semiconductor substrate by using the second mask;
• and
• irradiating the bottom surface of the semiconductor substrate, the side of the second region thereon being shielded with the second mask, with light ions by operating the light ion source to introduce lattice defects at a specified depth on the side of the first region on the bottom surface of the semiconductor substrate.