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US 2016/0254263 A1Published application
Methods and apparatuses including an active area of a tap intersected by a boundary of a well
AssigneeMicron Technology, Inc.
InventorMichael Smith
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Abstract
Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.
Claims6
An apparatus comprising:
- a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity;
- a tap to the well, wherein an active area of the tap is over both the well and the semiconductor structure.
An apparatus comprising:
- a memory array comprising a plurality of memory cells;
- and
- support circuitry coupled to the memory array, the support circuitry comprising a semiconductor device comprising
- a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity;
- and
- a tap to the well, wherein an active area of the tap is not fully within a boundary of the well.
3 more elements
Dependencies are inferred from the claim text.