US 2016/0254261 A1 · ADJACENT DEVICE ISOLATION

Abstract

An integrated circuit (IC) device may include a first active transistor of a first-type in a first-type region. The first active transistor may have a first-type work function material and a low channel dopant concentration in an active portion of the first active transistor. The IC device may also include a first isolation transistor of the first-type in the first-type region. The second active transistor may have a second-type work function material and the low channel dopant concentration in an active portion of the first isolation transistor. The first isolation transistor may be arranged adjacent to the first active transistor.

Claims28

Dependent claims

An integrated circuit (IC) device, comprising:

a first active transistor of a first-type in a first-type region, having a first-type work function material and a channel dopant concentration in an active portion of the first active transistor;
and
a first isolation transistor of the first-type in the first-type region having a second-type work function material and the channel dopant concentration in an active portion of the first isolation transistor, the first isolation transistor being adjacent to the first active transistor.

Dependencies are inferred from the claim text.

Facts

Application

14/633,011Filed 26 Feb 2015

Published

1 Sep 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification34 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 30/014
Manufacture or treatment: of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron…
H10D 30/019
Manufacture or treatment: of FETs having stacked nanowire, nanosheet or nanoribbon channels
H10D 30/0241
Of fin field-effect transistors [FinFET]: doping of vertical sidewalls, e.g. using tilted or multi-angled implants

Adjacent device isolation

Life of this patent

Adjacent device isolation

Life of this patent

Abstract

Claims28