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US 2016/0254258 A1Published application
Field effect transistor with integrated zener diode
AssigneeAlpha and Omega Semiconductor Incorporated
InventorHideaki Tsuchiko
Life of this patent
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Abstract
One or more Zener diodes and a field effect transistor having a drain connected in series with the one or more Zener diodes are integrally formed by a plurality of doped regions in the same P-type semiconductor substrate and separated by a punch through stop region. An N-type region is formed under the one or more Zener diodes.
Claims17
A device, comprising:
- one or more Zener diodes;
- and
- a field effect transistor having a drain connected in series with the one or more Zener diodes;
- wherein the one or more Zener diodes and field effect transistor are formed by a plurality of doped regions on a common P-type semiconductor substrate and separated by a punch through stop region;
- and
- an N-type region formed under the one or more Zener diodes configured to stop punch through from a P-well or P-body region of the Zener diode to the common P-type semiconductor substrate.
3 more elements
A method for fabricating a device, the method comprising:
- forming a field effect transistor having a drain connected in series with the one or more Zener diodes by forming a plurality of doped regions in a common P-type semiconductor substrate and separated by a punch through stop region;
- and
- forming an N-type region formed under the one or more Zener diodes configured to stop punch through from a P-well or P-body region of the Zener diode to the common P-type semiconductor substrate.
Dependencies are inferred from the claim text.