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US 2016/0254233 A1Published application
Composite carrier for warpage management
OwnerDyi-Chung HUinventor
Life of this patent
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Abstract
A composite carrier is disclosed for warpage management as a temporary carrier in semiconductor process. Warpage is reduced for a product, semi-product, or build-up layer processed on the temporary composite carrier which is peeled off the temporary carrier in a later step. The composite carrier comprises a top substrate and a bottom substrate, an adhesive layer is configured in between the top substrate and a bottom substrate. One of the embodiments discloses the top substrate of the composite carrier having a lower CTE and the bottom substrate of the composite carrier having a higher CTE.
Claims9
A composite carrier for warpage management, comprises:
- a top substrate, selected from a group consisting of Invar (1 ppm), silicon (Si, ˜3 ppm), Cemented Carbide (˜5.5 ppm), Alumina (Al, ˜7.2 ppm), Titanium (Ti, ˜8.6 ppm), glass (0˜10 ppm), copper clad laminate (CCL, 1˜17 ppm), stainless steel (10˜18 ppm), alloy 42 (˜4.8 ppm), Aluminum Oxide (Al2O3, ˜7 ppm), Aluminum Nitride (AlN, ˜5 ppm), and Zirconia (ZrO2, ˜10.5 ppm);
- a bottom substrate, selected from a group consisting of Invar (1 ppm), silicon (Si, ˜3 ppm), Cemented Carbide (˜5.5 ppm), Alumina (Al, ˜7.2 ppm), Titanium (Ti, ˜8.6 ppm), glass (0˜10 ppm), copper clad laminate (CCL, 1˜17 ppm), stainless steel (10˜18 ppm), alloy 42 (˜4.8 ppm), Aluminum Oxide (Al2O3, ˜7 ppm), Aluminum Nitride (AlN, ˜5 ppm), and Zirconia (ZrO2, 18 10.5 ppm);
- configured on bottom of the top substrate;
- and
- an adhesive layer, configured between the top substrate and the bottom substrate;
- wherein
- a top of the top substrate provides area for semiconductor process thereon.
4 more elements
Dependencies are inferred from the claim text.