Combined wafer production method with laser treatment and temperature-induced stresses

The method according to any of the preceding claims,

• characterised in that
• the solid body (2) is disposed on a holding layer (12) for holding the solid body (2), the holding layer (12) being disposed on a first level surface portion (14) of the solid body (2), the first level surface portion (14) of the solid body (2) being spaced apart from a second level surface portion (16) of the solid body (2), the polymer layer (10) being disposed on the second level surface portion (16), and the detachment plane (8) being aligned parallel to the first level surface portion (14) and/or the second level surface portion (16).

The method according to any of the preceding claims,

• characterised in that
• the solid body (2) comprises silicon carbide and/or gallium arsenite and/or a ceramic material, and the receiving layer is made of a polymer layer (10), the polymer layer and/or the holding layer (12) being made at least partially of PDMS, the holding layer (12) being disposed on an at least partially level surface of a stabilisation device (20) which is made at least partially of at least one metal.

The method according to any of the preceding claims,

• characterised in that
• the stresses in the solid body (2) can be set up such that the crack initiation and/or the crack propagation can be controlled in order to generate a pre-determined topography of the surface that is produced in the crack plane.

The method according to any of the preceding claims,

• characterised in that
• the radiation source is a femtosecond laser.

The method according to any of the preceding claims,

• characterised in that
• the radiation source, in particular the laser, has a pulse duration of less than 10 ps, preferably of less than 1 ps and particularly preferably of less than 500 fs.

The method according to any of the preceding claims,

• characterised in that
• the energy of the laser beam, in particular of the femtosecond laser, is chosen such that the damage propagation within the solid body is smaller than 3 times the Rayleigh length, preferably smaller than the Rayleigh length and particularly preferably smaller than one third of the Rayleigh length.

The method according to any of the preceding claims,

• characterised in that
• the wavelength of the laser beam, in particular of the femtosecond layer, is chosen such that the absorption of the solid body is less than 10 cm−1 and preferably less than 1 cm−1 and particularly preferably less than 0.1 cm−1.

The method according to any of the preceding claims,

• characterised in that
• the individual defects respectively result from multiphoton excitation brought about by the femtosecond laser.