Coarse Grid Design Methods and Structures

A method for manufacturing a semiconductor device, comprising:

• forming a first linear-shaped gate level conductive structure having a length as measured in a first direction and a width as measured in a second direction perpendicular to the first direction, the first linear-shaped gate level conductive structure having a lengthwise centerline oriented in the first direction;
• forming a second linear-shaped gate level conductive structure having a length as measured in the first direction and a width as measured in the second direction, the second linear-shaped gate level conductive structure having a lengthwise centerline oriented in the first direction, the lengthwise centerline of the second linear-shaped gate level conductive structure separated from the lengthwise centerline of the first linear-shaped gate level conductive structure by a gate pitch as measured in the second direction, a portion of the second linear-shaped gate level conductive structure positioned next to a portion of the first linear-shaped gate level conductive structure;
• forming a first contact structure formed to connect to the portion of the first linear-shaped gate level conductive structure that is positioned next to the portion of the second linear-shaped gate level conductive structure;
• forming a second contact structure formed to connect to the portion of the second linear-shaped gate level conductive structure that is positioned next to the portion of the first linear-shaped gate level conductive structure;
• and
• forming a linear-shaped interconnect level conductive structure having a length as measured in the second direction and a width as measured in the first direction, the linear-shaped interconnect level conductive structure positioned to extend over and connect to both the first contact structure and the second contact structure.