Methods of performing fin cut etch processes for finfet semiconductor devices and the resulting devices

A method, comprising:

• forming a plurality of fins above a substrate;
• forming dielectric material above and between said plurality of fins;
• forming a first mask layer above said dielectric material, said first mask layer having a first opening defined therein to expose a first portion of said dielectric material above at least a first subset of said plurality of fins;
• forming a first trench in said dielectric material and the fins in said first subset to remove a first portion of each of the fins in said first subset exposed by said first opening and define, for each of the fins in said first subset, a first fin segment and a second fin segment, each having a cut end surface;
• forming a first liner layer in said first trench and on at least said cut end surface of said first fin segment for each of the fins in said first subset;
• forming a second mask layer above said dielectric material, said second mask layer having a second opening defined therein to expose a second portion of said dielectric material above a second subset of said plurality of fins;
• forming a second trench in said dielectric material by removing said second portion of said dielectric material to expose a top surface of the fins in said second subset;
• and
• removing second portions of said second subset of fins exposed by said second trench, wherein said first liner layer protects said cut end surfaces of the fins in said first subset during the removing of said second portions.