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US 2016/0254186 A1Published application
Method of forming a wrap-around contact on a semiconductor device
AssigneeIntel Corporation
InventorsJEFFREY S LEIB, RALPH T TROEGER, DANIEL BERGSTROM
Life of this patent
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Abstract
Techniques and methods related to forming a wrap-around contact on a semiconductor device, and apparatus, system, and mobile platform incorporating such semiconductor devices.
Claims21
1-25. (canceled)
A method of forming a semiconductor device, comprising:
- depositing a contact material of an initial contact layer on a source region or drain region or both of at least two semiconductor bodies and separated from each other by a trench and disposed over a substrate;
- and
- re-sputtering the contact material of the initial contact layer to redistribute at least some of the contact material onto at least one portion of the semiconductor bodies within the trench.
A semiconductor device comprising:
- a substrate;
- at least two semiconductor bodies separated from each other by a trench and disposed over the substrate, the semiconductor bodies having a source region and a drain region separated by a channel region;
- a resputter-formed contact layer on the semiconductor bodies and formed by re-sputtering an initial contact layer at least partially redistributed to a portion of the semiconductor bodies within the trench;
- a gate dielectric layer disposed over the channel region of the semiconductor bodies;
- and
- a gate electrode disposed over the gate dielectric layer.
3 more elements
A mobile computing platform, comprising:
- a microprocessor comprising:
- a substrate,
- at least two semiconductor bodies separated from each other by a trench and disposed over the substrate, the semiconductor bodies having a source region and a drain region separated by a channel region,
- a resputter-formed contact layer on the semiconductor bodies and formed by re-sputtering an initial contact layer at least partially redistributed to a portion of the semiconductor bodies within the trench;
- a gate dielectric layer disposed over the channel region of the semiconductor bodies, and
- a gate electrode disposed over the gate dielectric layer;
- a display screen communicatively coupled to the microprocessor;
- and
- a wireless transceiver communicatively coupled to the microprocessor.
6 more elements
Dependencies are inferred from the claim text.