Self aligned raised fin tip end sti to improve the fin end epi quality
AssigneeGlobalfoundries Inc.
InventorsBingwu LIU, Hui ZANG
Life of this patent
Estimating the term…
Abstract
A method as set forth herein can include patterning using a first mask an isolation trench at a sidewall to sidewall isolation (SSI) region of a semiconductor structure having a substrate including fins and a main body section, filling the isolation trench at a SSI region with dielectric material, using a second mask to pattern an isolation trench at a single diffusion break (SDB) region, filling the isolation trench at the SDB region with dielectric material, and recessing dielectric material.
Claims20
A method comprising:
- patterning a sidewall to sidewall isolation (SSI) trench at an SSI region of a semiconductor structure having a substrate including fins and a main body section;
- filling the SSI isolation trench with dielectric material;
- patterning a single diffusion break (SDB) isolation trench at an SDB region;
- and
- filling the SDB isolation trench with dielectric material.
The method of 1, wherein the method includes processing the isolation trench at a SDB region so that the isolation trench at a SDB region is T shaped.
A semiconductor structure comprising:
- a substrate having a main body section and a plurality of fins;
- a sidewall to sidewall isolation (SSI) region defined between fins of the plurality of fins, the SSI region having an SSI isolation trench;
- and
- a single diffusion break (SDI) region defined between active FET regions of common polarity formed on the substrate, the SDB region having an SDB isolation trench;
- a dielectric material formation at the SSI region having a top elevation lower than a top elevation of the substrate;
- a dielectric material formation at the SDB region having a top elevation higher than a top elevation of the substrate.
Dependencies are inferred from the claim text.