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US 2016/0254166 A1Published application
Chemical Circulation System and Methods of Cleaning Chemicals
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Hua Huang, Chung-Ju Lee
Life of this patent
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Abstract
A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions.
Claims20
A method comprising:
- using a wet-clean circulation system to form an integrated circuit, the wet-clean circulation system comprising:
- a storage;
- a filter connected to the storage;
- a metal ion absorber connected to the filter;
- and
- a monitor connected to the metal ion absorber;
- and
- a process chamber, wherein the storage, the filter, the metal ion absorber, the monitor, and the process chamber are connected in series to allow a chemical solution to circulate in the wet-clean circulation system.
5 more elements
A method comprising:
- using a wet-clean circulation system to form an integrated circuit, the method comprising conducting a chemical solution into the wet-clean circulation system, wherein the wet-clean circulation system comprises:
- a storage configured to store the chemical solution;
- a filter configured to filter particles in the chemical solution;
- a metal ion absorber configured to absorb metal ions in chemical solution;
- and
- a monitor configured to monitor the chemical solution;
- and
- using the chemical solution to manufacture the integrated circuit.
5 more elements
A method comprising:
- using a wet-clean circulation system to form an integrated circuit, wherein the wet-clean circulation system comprises:
- a metal ion absorber configured to absorb metal ions in a chemical solution;
- a monitor connected to an outlet of the metal ion absorber, wherein the monitor is configured to monitor an amount of metal ions in the chemical solution;
- and
- a process chamber configured to receive the chemical solution out of the monitor, wherein the process chamber is configured to etch a metal-containing region of a wafer in which the integrated circuit is being formed, and the metal-containing region comprises a same type of metal as the metal ions.
2 more elements
Dependencies are inferred from the claim text.