Co-fabrication of non-planar semiconductor devices having different threshold voltages

Abstract

Co-fabricating non-planar (i.e., three-dimensional) semiconductor devices with different threshold voltages includes providing a starting semiconductor structure, the structure including a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate, at least two gate structures encompassing a portion of the raised structures, each gate structure including a gate opening lined with dielectric material and partially filled with work function material, a portion of the work function material being recessed. The co-fabrication further includes creating at least one conformal barrier layer in one or more and less than all of the gate openings, filling the gate openings with conductive material, and modifying the work function of at least one and less than all of the filled gate structures.

Dependencies are inferred from the claim text.