Methods of forming patterns with block copolymer

A method of forming patterns, the method comprising:

• forming a guide pattern and first peripheral patterns over an underlying layer, the guide pattern being formed to provide first openings, the first peripheral patterns being formed to provide second openings and a fifth opening, wherein the fifth opening is an alignment key;
• aligning the guide pattern and the underlying layer using the fifth opening;
• forming a block copolymer layer filling the first, the second, and the fifth openings;
• annealing the block copolymer layer to form blocking portions in the second and fifth openings and to form at least one first domain and a second domain in each of the first openings, wherein the second domain surrounds the first domain;
• selectively removing the first domain to form a third opening;
• and
• etching the underlying layer using the blocking portions and the second domain as etch barriers to form a fourth opening that extends from the third opening into the underlying layer.

A method of forming patterns, the method comprising:

• forming a guide pattern and first peripheral patterns over an underlying layer, the guide pattern being formed to provide first openings, the first peripheral patterns being formed to provide a fifth opening;
• aligning the guide pattern with the underlying layer using the fifth opening;
• forming the block copolymer layer filling the first and fifth openings;
• annealing the block copolymer layer to provide a blocking portion in the fifth opening and to form at least one first domain and a second domain in each of the first openings, wherein the second domain surrounds the first domain;
• selectively removing the first domain to form a third opening;
• and
• etching the underlying layer using the blocking portion and the second domains as etch barriers to form a fourth opening that extends from the third opening into the underlying layer.