Selective dopant junction for a group iii-v semiconductor device

A method of forming a dopant junction in a semiconductor device, the method comprising:

• performing a surface modification treatment on an exposed surface of a semiconductor layer;
• depositing an n-type dopant material for a Group III-V semiconductor material on the exposed surface of the semiconductor layer;
• performing a low temperature anneal in an oxygen free environment in order to drive the dopant material into the semiconductor layer;
• depositing a metal layer on the dopant material;
• and
• alloying the metal layer with the dopant material to form a semiconductor device junction;
• wherein:
• the semiconductor layer is composed of a Group III-V semiconductor material;
• the surface modification treatment occurs in a low pressure vacuum chamber and wherein the surface modification treatment includes applying a low velocity stream of gaseous hydrogen to the exposed surface of the semiconductor layer in order for oxygen desorption to occur to form a water vapor, which thereby removes a plurality of surface oxides from the exposed surface of the semiconductor layer in order to provide an oxide-free surface for material adhesion, and wherein after the surface modification treatment, the semiconductor device remains in the oxygen free environment;
• and
• each of the above processes occur at a low temperature.