Silicon carbide semiconductor device and manufacturing method for same

Abstract

A method of manufacturing a silicon carbide semiconductor device in which a first-conductivity-type silicon carbide semiconductor epitaxial layer is formed on a main surface of a first-conductivity-type silicon carbide semiconductor substrate, wherein the silicon carbide semiconductor device manufacturing method includes: a step for supplying strain energy to at least one of (i) a surface layer of the surface of the silicon carbide semiconductor substrate on which the silicon carbide semiconductor epitaxial layer is formed, and (ii) the surface of the silicon carbide semiconductor epitaxial layer, a step for forming a carbon film on the surface layer, and a step for forming a recrystallized layer by adding a heat treatment for recrystallizing the surface layer to which the strain energy is supplied.

Dependencies are inferred from the claim text.