Method for cleaning wafer

A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern, the method at least comprising:

• a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern;
• a protective film forming step of holding a protective film forming chemical liquid at least in the recessed portion of the pattern after the pre-treating step;
• and
• a drying step of removing the liquids from the pattern by drying,
• the protective film forming chemical liquid being a chemical liquid containing a water-repellent protective film forming agent for forming a water-repellent protective film at least on the surface of the recessed portion,
• the cleaning liquid being acidic if the protective film forming chemical liquid is basic, or being basic if the protective film forming chemical liquid is acidic.