Plasma pre-clean module and process

A method for integrated circuit fabrication, the method comprising:

• removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
• depositing a halogen-containing material on the surface of the substrate in a reaction chamber;
• and
• sublimating the halogen-containing material, wherein sublimating the halogen-containing material comprises heating the surface of the substrate to a temperature of less than 100° C.

A method for integrated circuit fabrication, the method comprising:

• removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
• depositing a halogen-containing material on the surface of the substrate in a reaction chamber, wherein depositing the halogen-containing material comprises exposing the surface of the substrate to a reactant gas activated by a remote plasma source;
• and
• sublimating the halogen-containing material, wherein sublimating the halogen-containing material comprises heating the surface of the substrate to a temperature of 80° C. to 100° C.