Method for generating parameter pattern, ion implantation method and feed forward semiconductor manufacturing method

An ion implantation method, comprising:

• performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results;
• deriving a control signal comprising a parameter pattern according to the plurality of measured results;
• and
• inputting the control signal to an ion implanter to achieve a desired ion implantation pattern in each of the plurality of regions;
• wherein the parameter pattern comprises a plurality of regional parameter values corresponding to the plurality of regions on the surface of the workpiece.

A Feed Forward semiconductor manufacturing method, comprising:

• forming a layer with a desired pattern on a surface of a workpiece;
• deriving a control signal comprising a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece;
• and
• performing an ion implantation on the surface of the workpiece according to the control signal;
• wherein the parameter pattern comprises a plurality of regional parameter values corresponding to the plurality of regions on the surface of the workpiece.