Memory device

A memory device, comprising:

• a plurality of row blocks each comprising a plurality of cell blocks, each comprising a plurality of normal columns and one or more redundancy columns;
• and
• a control unit suitable for storing a plurality of pieces of repair information each corresponding to one of the row blocks in a first mode and corresponding to two or more of the row blocks in a second mode,
• wherein the control unit repairs normal columns using redundancy columns in a plurality of cell blocks corresponding to the one of the row blocks in the first mode, and repairs normal columns using redundancy columns in one or more of cell blocks corresponding to the two or more of the row blocks in the second mode.

A memory device, comprising:

• first to N-th row blocks each comprising first to M-th cell blocks each comprising a plurality of normal columns and one or more redundancy columns, wherein the N and M are natural numbers and the first to M-th cell blocks are divided into first and second groups;
• and
• a control unit suitable for storing first to N-th repair information, wherein K-th repair information corresponds to a K-th row block in a first mode, and K-th and (K+1)-th repair information corresponds to both K-th and (K+1)-th row blocks in a second mode, and the K is an odd number where 1≦K<N,
• wherein the control unit repairs normal columns using redundancy columns in first to M-th cell blocks of the K-th row block using the K-th repair information in a first mode, and repairs normal columns using redundancy columns in a first group of cell blocks of the K-th and (K+1)-th row blocks using the K-th repair information and normal columns using redundancy columns in a second group of cell blocks of the K-th and (K+1)-th row blocks using the (K+1)-th repair information.