Fast method for reactor and feature scale coupling in ald and cvd
AssigneeUchicago Argonne, LLC
InventorsAngel Yanguas-Gil, Jeffrey W. Elam
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AssigneeUchicago Argonne, LLC
InventorsAngel Yanguas-Gil, Jeffrey W. Elam
Estimating the term…
Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.
A method for modeling to model reaction and transport of gases and liquid comprising:
A method for simulating reactor-scale ALD, comprising
The method of claim 9, wherein the connection between the feature and reactor scale models takes place using the method derived in claim 1
A computer implemented system for simulating reactor-scale ALD, comprising:
A method to allow the concurrent solution of the coating of nanostructured materials consisting of:
Dependencies are inferred from the claim text.