System and method including three dimensional nonvolatile memory device and random access memory
AssigneeSamsung Electronics Co., Ltd.
InventorsBrung Hei JUN, Donghun KWAK
Life of this patent
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Abstract
A program method for a memory system including a three-dimensional nonvolatile memory having multi-level memory cells and a random access memory. The method uses the random access memory to variously store selected bits of multi-bit data during the programming of a row of memory cells in the three-dimensional nonvolatile memory.
Claims20
A program method for a memory system including a three-dimensional nonvolatile memory having a page buffer and multi-level memory cells arranged along a row direction, and a random access memory, the method comprising:
- receiving externally provided program data;
- determining whether the received program data is whole data associated with the memory cells and corresponding to multi-page data;
- and
- upon determining that the received program data is whole data programming the program data by loading the multi-page data to the page buffer and then simultaneously programming the bits of the multi-page data from the page buffer to the memory cells,
- else storing the received program data in the random access memory.
A program method for a memory system including a controller, a three-dimensional nonvolatile memory having a page buffer and multi-level memory cells arranged along a row direction, and a random access memory, the method comprising:
- receiving externally provided, multi-page, program data in the controller;
- storing the received program data in the random access memory until the received program data stored in the random access memory is whole data associated with the memory cells and corresponding to the multi-page data;
- loading the multi-page data to the page buffer;
- and
- simultaneously programming the multi-page data from the page buffer to the memory cells.
A program method for a memory system including a controller, a three-dimensional nonvolatile memory having a page buffer and N-bit memory cells arranged along a row direction, and a random access memory, the method comprising:
- receiving a first bit of N-bit data in the controller and storing the first bit of the N-bit data in the random access memory;
- after storing the first bit of the N-bit data in the random access memory, receiving a second bit of the N-bit data in the controller, wherein the combination of at least the first bit and second bit of the N-bit data is whole data associated with the memory cells and corresponding to multi-page data;
- loading the multi-page data to the page buffer, wherein the loading of the multi-page data to the page buffer includes transferring the first bit of the N-bit data from the random access memory to the page buffer, and directly transferring the second bit of the N-bit data from the controller to the page buffer by bypassing the random access memory;
- and
- simultaneously programming the multi-page data from the page buffer to the memory cells.
A program method for a memory system including a controller, a three-dimensional nonvolatile memory having a page buffer and N-bit memory cells arranged along a row direction, and a random access memory, the method comprising:
- receiving a first bit of N-bit data in the controller, directly loading the first bit of N-bit data to the page buffer without passing through the random access memory, and then programming the first bit of the N-bit data to the memory cells;
- after programming the first bit of the N-bit data to the memory cells, receiving a second bit of the N-bit data in the controller and storing the second bit of the N-bit data in the random access memory;
- after storing the second bit of the N-bit data in the random access memory, transferring the second bit of the N-bit data from the random access memory to the page buffer;
- receiving a third bit of the N-bit data in the controller and directly loading the third bit of N-bit data to the page buffer without passing through the random access memory, wherein the combination of the first bit, the second bit and the third bit of the N-bit data is whole data associated with the memory cells and corresponds to multi-page data;
- and
- simultaneously programming the second bit and third bit of the N-bit data from the page buffer to the memory cells.
A program method for a memory system including a controller, a three-dimensional nonvolatile memory having a page buffer and N-bit memory cells arranged along a row direction, and a random access memory, the method comprising:
- receiving a first bit of N-bit data in the controller and storing the first bit of N-bit data in the random access memory;
- receiving a second bit of N-bit data in the controller and storing the second bit of N-bit data in the random access memory;
- simultaneously loading the first bit and second bit of the N-bit data from the random access memory to the page buffer, and then simultaneously programming the first bit and second bit of the N-bit data from the page buffer to the memory cells;
- after simultaneously programming the first bit and second bit of the N-bit data from the page buffer to the memory cells, receiving a third bit of N-bit data in the controller, storing the third bit of N-bit data in the random access memory, loading the third bit of the N-bit data from the random access memory to the page buffer, and then programming the third bit of the N-bit data from the page buffer to the memory cells,
- wherein the combination of the first bit, the second bit and the third bit of the N-bit data is whole data associated with the memory cells and corresponds to multi-page data.
Dependencies are inferred from the claim text.