Production method of semiconductor element, and ion implantation method

Abstract

A method for producing a semiconductor element includes applying a photoresist composition on a surface of an inorganic substrate to provide a resist film. The photoresist composition includes a polymer comprising an acid-labile group, and an acid generator. The resist film is exposed. The exposed resist film is developed with a developer solution containing an organic solvent to form a negative resist pattern. Ions are implanted into the inorganic substrate using the negative resist pattern as a mask. The photoresist composition preferably further contains a compound including a carboxy group, a sulfo group, a group represented by formula (i), a group capable of generating the carboxy group, the sulfo group or the group represented by the formula (i) by an action of an acid, a lactonic carbonyloxy group or a combination thereof, and having a molecular weight of no greater than 1,000.

Dependencies are inferred from the claim text.