Magnetic field sensor arrangement

A magnetic field sensor (50) including:

• a. a giant magnetoresistance (GMR) sensing circuit (60) having GMR elements (52, 54) wherein:
• (1) at least one first GMR element (52) is at least partially housed in either:
• (a) a flux-reducing first shielding material that reduces the magnetic field impinging on the first GMR element (52), or
• (b) a flux-concentrating first shielding material that amplifies the magnetic field impinging on the first GMR element (52);
• (2) at least one second GMR element (54) is either:
• (a) housed in a second shielding material which either:
• i. amplifies the magnetic field impinging on the second GMR element (52) where the first shielding material reduces the magnetic field impinging on the first GMR element (52), or
• ii. reduces the magnetic field impinging on the second GMR element (52) where the first shielding material amplifies the magnetic field impinging on the first GMR element (52);
• or
• (b) not housed in a shielding material;
• b. an evaluation circuit (64) configured to provide a signal that indicates strength of an external magnetic field, the signal being dependent on voltages measured at different locations in the GMR sensing circuit (60), the different locations being spaced apart from each other by at least one of the GMR elements (52, 54).