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AssigneeKanto Denka Kogyo Co., Ltd.
InventorsKatsuhiro SAITO, Shinji MITA, Hiromi OYA, Shinsuke KATAYAMA, Yasuyuki FUJIWARA, Ichiro MORIMOTO, Hiroyuki UEHARA, Norihisa KIMURA
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A method for obtaining high-purity phosphorus pentafluoride (PF5), which is industrially useful in the fields of semiconductors and batteries, from PF5 containing a gas mixture of HCl, HF, and so on. Specifically, provided is a process for purifying phosphorus pentafluoride including (1) an immobilization step in which phosphorus pentafluoride containing a mixture is brought into contact with a metal fluoride (MFn; M is an n-valent metal) having a specific surface area of 1.0 m2/g or more at 40° to 150° C. to immobilize phosphorus pentafluoride in the form of a hexafluorophosphate (M(PF6)n), (2) a separation step in which the mixture remaining in the gas phase is expelled out of the reaction system to separate the mixture from the hexafluorophosphate, and (3) a heat-decomposition step in which the hexafluorophosphate freed of the mixture is heated at 150° to 400° C. under a pressure of −0.1 to 0.1 MPa·G to give phosphorus pentafluoride.
A process for purifying phosphorus pentafluoride comprising (1) an immobilization step in which phosphorus pentafluoride (PF5) containing a mixture is brought into contact with a metal fluoride (MFn wherein M is an n-valent metal) having a specific surface area of 1.0 m2/g or more at 40° to 150° C. to immobilize phosphorus pentafluoride in the form of a hexafluorophosphate (M(PF6)n), (2) a separation step in which the mixture remaining in the gas phase is expelled out of the reaction system to separate the mixture from the hexafluorophosphate, and (3) a heat-decomposition step in which the hexafluorophosphate freed of the mixture is heated at 150° to 400° C. under a pressure of −0.1 to 0.1 MPa·G to give phosphorus pentafluoride.
Dependencies are inferred from the claim text.