Organic semiconductor doping process

A process according to claim 1 wherein the process further comprises producing the oxidised salt of the organic semiconductor by a process comprising:

• (a) treating the organic semiconductor with an oxidant to produce an oxidation product;
• (b) isolating the oxidation product;
• (c) performing an anion exchange with A on the oxidation product to produce an oxidised salt of the organic semiconductor comprising A, wherein A is as defined in claim 21 and
• (d) isolating the oxidised salt of the organic semiconductor.

A process for producing a layer of p-doped organic semiconductor comprising:

• (a) producing a p-doped organic semiconductor by a process comprising treating an organic semiconductor with a composition comprising an oxidised salt of the organic semiconductor, which oxidised salt of the organic semiconductor is a salt of formula [OS][A], wherein OS is a cation of an organic semiconductor and A is ClO4−, NO3− or an anion of formula (i), (ii), (iii) or (iv)
• wherein each X is the same or different and is an electron withdrawing group, optionally wherein X is CF3 or CF2CF3;
• (b) disposing on a substrate a composition comprising a solvent and the p-doped organic semiconductor;
• and
• (c) removing the solvent.

A process for producing a semiconductor device comprising

• a step of producing a p-doped organic semiconductor by a process comprising treating an organic semiconductor with a composition comprising an oxidised salt of the organic semiconductor, which oxidised salt of the organic semiconductor is a salt of formula [OS][A], wherein OS is a cation of an organic semiconductor and A is ClO4−, NO3− or an anion of formula (i), (ii), (iii) or (iv)
• wherein each X is the same or different and is an electron withdrawing group, optionally wherein X is CF3 or CF2CF3;
• or
• a step of producing a layer of a p-doped organic semiconductor by a process comprising:
• (a) producing a p-doped organic semiconductor by a process comprising treating an organic semiconductor with a composition comprising an oxidised salt of the organic semiconductor, which oxidised salt of the organic semiconductor is a salt of formula [OS][A], wherein OS is a cation of an organic semiconductor and A is ClO4−, NO3− or an anion of formula (i), (ii), (iii) or (iv)
• wherein each X is the same or different and is an electron withdrawing group,
• optionally wherein X is CF3 or CF2CF3;
• (b) disposing on a substrate a composition comprising a solvent and the p-doped organic semiconductor;
• and
• (c) removing the solvent.

A process according to claim 27 wherein the process comprises:

• (a) disposing on a first electrode material at least one layer of a semiconductor material to produce a resulting substrate comprising a first electrode material and at least one layer of a semiconductor material;
• (b) sensitizing the resulting substrate to produce a sensitized substrate;
• and
• (c) producing a layer of a p-doped organic semiconductor by a process according to claim 52 on the sensitized substrate, or
• producing a p-doped organic semiconductor by a process according to claim 52 and forming a layer of the p-doped organic semiconductor thus produced on the sensitized substrate.