Light-emitting device and production method therefor

A flip-chip type light-emitting device in which a Group III nitride semiconductor layer is disposed on one surface of a Group III nitride semiconductor substrate, and other surface of the substrate is covered with a sealing material, the light-emitting device comprising:

• an uneven structure with ridges and recesses formed on a surface opposite to the semiconductor layer side of the substrate;
• and
• an antireflection film formed continuously on the uneven structure and side surfaces of the substrate along the ridges and recesses of the uneven structure without being filled in recesses, which is made of a material having a refractive index smaller than that of the substrate and larger than that of the sealing material to prevent reflection between the substrate and the sealing material by the interference of light;
• and
• wherein areas of the side surfaces of the substrate at the uneven structure side are inclined with respect to a vertical direction of the main surface of the substrate, and other areas of the side surfaces of the substrate are vertical to the main surface of the substrate;
• and
• wherein the antireflection film is formed on the inclined side surface areas of the substrate and not formed on the vertical side surface areas of the substrate.