Top emitting semiconductor light emitting device

A device comprising:

• a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region;
• a growth substrate attached to the semiconductor structure, the growth substrate having a thickness less than 150 microns;
• and
• a reflective layer disposed on a sidewall of the growth substrate and a sidewall of the semiconductor structure;
• wherein the reflective layer is arranged such that a majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate;
• wherein a wavelength converting layer is disposed over the first surface of the growth substrate.

A method comprising:

• attaching a plurality of semiconductor light emitting devices to a carrier;
• disposing a reflective material in areas between the semiconductor light emitting devices;
• separating two neighboring semiconductor light emitting devices, wherein separating comprises cutting the reflective material;
• and
• after separating two neighboring semiconductor light emitting devices, removing the carrier;
• wherein after said separating two neighboring semiconductor light emitting devices, each semiconductor light emitting device comprises a growth substrate on which a semiconductor portion of the semiconductor light emitting device is grown.