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US 2016/0240729 A1Published application
Plasmonic light emitting diode
AssigneeHewlett Packard Enterprise Development LP
InventorsMichael Renne Ty Tan, David A. Fattal, Marco Fiorentino, Shih-Yuan Wang
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Abstract
A light emitting diode includes a diode structure containing a quantum well, an enhancement layer, and a barrier layer between the enhancement layer and the quantum well. The enhancement layer supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well. The barrier layer serves to block diffusion between the enhancement layer and the diode structure.
Claims20
A light emitting diode (LED) comprising:
- a diode structure containing a quantum well;
- an enhancement layer that supports plasmon oscillations at a first frequency, wherein the plasmon oscillations having the first frequency couple to photons produced by a combination of electrons and holes in the quantum well;
- and
- a barrier layer and a patterned contact between the enhancement layer and the quantum well, wherein the barrier layer comprises a layer of non-diffusive metal, wherein the barrier layer and the patterned contact block diffusion between the enhancement layer and the diode structure and wherein at least the barrier layer allows the plasmon oscillations of the enhancement layer to interact with the quantum well.
1 more element
A fabrication method comprising:
- fabricating a diode structure including a quantum well;
- depositing a barrier layer and a patterned contact on the diode structure;
- and
- depositing an enhancement layer on the barrier layer and the patterned contact, wherein at least the barrier layer allows plasmon oscillations of the enhancement layer to interact with the quantum well to increase spontaneous emission rates from electron-hole combinations in the quantum well, wherein the barrier layer and the patterned contact block diffusion between the enhancement layer and the diode structure.
1 more element
A light emitting diode (LED) comprising:
- a substrate;
- an n-type structure on the substrate;
- an intrinsic structure containing a quantum well on the n-type structure;
- a p-type structure on the intrinsic structure;
- a barrier layer and a patterned contact on the p-type structure;
- and
- an enhancement layer that supports plasmon oscillations at a desired frequency, wherein the barrier layer and the patterned contact block diffusion between the enhancement layer and the p-type structure, wherein the barrier layer allows the plasmon oscillations of the enhancement layer to interact with the quantum well.
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Dependencies are inferred from the claim text.