Method for producing a solar cell
AssigneeIon Beam Services
InventorsTim BOESCKE, Daniel KANIA
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Abstract
The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material. In a first surface (3a) of a semiconductor substrate (3), a first doping area (5) is formed by thermally diffusing a first dopant and in the second surface (3b) of the semiconductor substrate, a second doping area (7) is formed by implanting ions and thermally implanting a second dopant.
Claims12
A method for producing a solar cell (1) from crystalline semiconductor material, wherein in a first surface (3a) of a semiconductor substrate (3) a first doping region (5) is formed by thermal indiffusion of a first dopant and in the second surface (3b) of the semiconductor substrate a second doping region (7) is formed through ion implantation or thermal indiffusion of a second dopant,
- whereas through the ion implantation of the second dopant, a dopant deposition layer is formed on or close to the second surface and on the second surface a diffusion barrier layer (9b) for preventing an outdiffusion of the second dopant is generated out of the second surface and then at least one thermal process step is carried to form the first and second doping regions.
Dependencies are inferred from the claim text.