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US 2016/0240719 A1Published application
Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof
AssigneesNational Taiwan University, Taiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Yu Lin, Shih-Yen Lin, Si-Chen Lee, Samuel C. Pan
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Abstract
Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.
Claims21
A method, comprising:
- epitaxially forming a first two-dimensional (2D) material layer on a substrate;
- and
- epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.
A method, comprising:
- forming a first carbon-containing layer on a sapphire substrate;
- forming a first transition metal dichalcogenide (TMD)-containing layer on the first carbon-containing layer;
- and
- forming a second carbon-containing layer on the first TMD-containing layer.
1 more element
17-20. (canceled)
A method, comprising:
- forming a first carbon-containing layer on a sapphire substrate;
- and
- forming a first transition metal dichalcogenide (TMD)-containing layer on the first carbon-containing layer.
Dependencies are inferred from the claim text.