Stacked Gate-All-Around FinFET and Method Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Chi-Wen Liu, Ying-Keung Leung
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Abstract
A device includes a first semiconductor strip, a first gate dielectric encircling the first semiconductor strip, a second semiconductor strip overlapping the first semiconductor strip, and a second gate dielectric encircling the second semiconductor strip. The first gate dielectric contacts the first gate dielectric. A gate electrode has a portion over the second semiconductor strip, and additional portions on opposite sides of the first and the second semiconductor strips and the first and the second gate dielectrics.
Claims21
A device comprising:
- a first semiconductor strip;
- a first gate dielectric encircling the first semiconductor strip;
- a second semiconductor strip overlapping the first semiconductor strip;
- a second gate dielectric encircling the second semiconductor strip, wherein the first gate dielectric contacts the first gate dielectric;
- and
- a gate electrode comprising a first portion over the second semiconductor strip, and portions on opposite sides of the first and the second semiconductor strips and the first gate dielectric and the second gate dielectric.
A device comprising:
- a substrate;
- a first Shallow Trench Isolation (STI) region and a second STI region extending into the substrate;
- a silicon germanium oxide layer between the first and the second STI regions;
- a plurality of semiconductor strips stacked to overlap the silicon germanium oxide layer;
- a gate dielectric encircling each of the plurality of semiconductor strips, wherein portions of the gate dielectric encircling the plurality of semiconductor strips are joined together to form a continuous region;
- a gate electrode on the gate dielectric;
- and
- source and drain regions connected to opposite ends of the plurality of semiconductor strips.
-20. (canceled)
A device comprising:
- a semiconductor substrate;
- a first semiconductor strip over the semiconductor substrate;
- a first gate dielectric encircling the first semiconductor strip;
- a second semiconductor strip overlapping the first semiconductor strip;
- a second gate dielectric encircling the second semiconductor strip, wherein the first gate dielectric contacts the first gate dielectric;
- a gate electrode comprising a first portion over the second semiconductor strip, and portions on opposite sides of the first and the second semiconductor strips and the first gate dielectric and the second gate dielectric;
- and
- a silicon germanium oxide layer underlying and in contact with the first gate dielectric.
Dependencies are inferred from the claim text.