Semiconductor devices and a method for forming a semiconductor device

A semiconductor device, comprising:

• a first doping region of a first conductivity type formed in a fourth doping region of a semiconductor substrate, wherein the first doping region forms a first transistor body region of a first transistor structure and a second source/drain region of a second transistor structure, and wherein the fourth doping region forms a second source/drain region of the first transistor structure;
• a second doping region of a second conductivity type formed adjacent to the first doping region, wherein the second doping region forms a first source/drain region of the first transistor structure and a second transistor body region of the second transistor structure;
• a third doping region of a first conductivity type formed adjacent to the second doping region, wherein the third doping region forms a first source/drain region of the second transistor structure;
• a gate of the first transistor structure, wherein a transistor channel of the first transistor structure controllable by the gate of the first transistor structure is limited to a channel region located between the first source/drain region of the first transistor structure and the second source/drain region of the first transistor structure;
• a first electrode structure in electrical connection with the second doping region and the third doping region;
• and
• a second electrode region in electrical connection with the fourth doping region.

A method for forming a semiconductor device, the method comprising:

• forming a first doping region of a first conductivity type in a fourth doping region of a semiconductor substrate to form a first transistor body region of a first transistor structure and a second source/drain region of a second transistor structure;
• forming a second doping region of a second conductivity type in the first doping region to form a first source/drain region of the first transistor structure and a second transistor body region of the second transistor structure;
• forming a third doping region of a first conductivity type in the second doping region to form a first source/drain region of the second transistor structure;
• and
• forming a gate of the first transistor structure, wherein a first edge of the gate of the first transistor structure is located adjacent to the second doping region of the second conductivity type and a second edge of the gate of the first transistor structure is located on the fourth doping region of the semiconductor substrate.