Semiconductor device and semiconductor module
AssigneeMitsubishi Electric Corporation
InventorsHiroyuki NAKAMURA, Akira OKADA, Eiji NOJIRI
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Abstract
In a semiconductor device, an element forming region formed with a semiconductor element for controlling a current is defined on a surface of a semiconductor substrate. A termination region is defined so as to surround the element forming region. In a gate electrode, a probe-contacting region and a wire region are defined. The probe-contacting region and the wire region are separated by an insulator formed on a surface of the gate electrode. Thus, the surface of the probe-contacting region and the surface of the wire region are located at the same height.
Claims11
A semiconductor device comprising:
- a semiconductor substrate having a first main surface and a second main surfaces facing each other;
- an element forming region defined on said first main surface of said semiconductor substrate;
- a termination region defined on said first main surface of said semiconductor substrate and configured to surround said element forming region;
- and
- a first main surface electrode including a first electrode formed in said element forming region and provided with a first region and a second region,
- said first region and said second region being separated by a separation member formed on a surface of said first electrode,
- said first region being formed into a rectangular shape having a long side and a short side, and
- said second region being located closer to said long side of said first region.
Dependencies are inferred from the claim text.