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US 2016/0240627 A1Published application
Methods of forming metal silicide layers including dopant segregation
AssigneeSamsung Electronics Co., Ltd.
InventorChoong-Rae Cho
Life of this patent
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Abstract
A method of forming a metal silicide layer can include implanting dopants to a first depth below a surface of a semiconductor substrate including an active area. A metal-silicon composite layer can be formed on the semiconductor substrate and the metal-silicon composite layer can be silicided to form the metal silicide layer on the active area.
Claims20
A method of forming a metal silicide layer, the method comprising:
- forming a doped layer including segregation dopants on a surface of a semiconductor substrate;
- forming a metal-silicon composite layer by depositing a metal and silicon on the doped layer;
- and
- forming the metal silicide layer by siliciding the metal-silicon composite layer.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- forming an insulating layer on a semiconductor substrate including an active region;
- forming a contact hole through the insulating layer to expose the active region;
- providing silicon and a metal to the active region in the contact hole;
- performing a silicidation process on the silicon and the metal in the contact hole to provide a metal silicide layer on the active region in the contact hole;
- and
- forming a metal contact layer on the metal silicide layer.
3 more elements
A method of forming a metal silicide layer, the method comprising:
- implanting dopants to a first depth below a surface of a semiconductor substrate including an active area;
- forming a metal-silicon composite layer on the semiconductor substrate;
- and
- siliciding the metal-silicon composite layer to form the metal silicide layer on the active area.
1 more element
Dependencies are inferred from the claim text.