Semiconductor device

A semiconductor device, comprising:

• a first wiring layer including first wirings embedded into a first interlayer insulating film;
• a second wiring layer formed over the first wiring layer including second wirings and via electrodes embedded into a second interlayer insulating film;
• a gate electrode comprised one of the first wirings;
• a first gate insulating film formed between the first wiring layer and the second wiring layer and located over the gate electrode;
• a second gate insulating over the first gate insulating film;
• a diffusion prevention film covering the first wirings except the gate electrode and formed between the first wiring layer and the second wiring layer;
• and
• a semiconductor film formed between the first wiring layer and the second wiring layer and located over the second gate insulating film;
• wherein the second wirings are coupled to the semiconductor film through the via electrodes.