Doped zinc oxide and n- doping to reduce junction leakage
AssigneeInternational Business Machines Corporation
InventorsJoel P. de Souza, Keith E. Fogel, Jeehwan Kim, Siegfried L. Maurer, Devendra K. Sadana
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Abstract
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-doped layer is formed on the p-doped layer, the n-doped layer including a doped III-V material. A contact interface layer is formed on the n-doped layer. The contact interface layer includes a II-VI material. A contact metal is formed on the contact interface layer to form an electronic device.
Claims20
A semiconductor device, comprising:
- a substrate;
- a p-doped layer including a doped III-V material on the substrate;
- an n-doped layer formed on the p-doped layer, the n-doped layer including a doped III-V material;
- a contact interface layer formed on the n-doped layer, the contact interface layer including a II-VI material;
- and
- a contact metal formed on the contact interface layer to form an electronic device.
A semiconductor device, comprising:
- a substrate;
- a p-doped layer including a doped III-V material on the substrate;
- an n-doped layer formed on the p-doped layer, the n-doped layer including a doped III-V material;
- a contact interface formed on or in the n-doped layer including a reaction product layer between material of the n-doped layer and a II-VI material;
- and
- a contact metal formed on the contact interface to form an electronic device.
A method for forming a semiconductor device, comprising:
- forming a p-doped layer including a doped III-V material on a substrate;
- forming an n-doped layer including a doped III-V material on the p-doped layer;
- and
- forming a contact interface layer on the n-doped layer, the contact interface layer including a II-VI material.
Dependencies are inferred from the claim text.