US 2016/0240618 A1 · Depression Filling Method and Processing Apparatus

Abstract

A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

Claims10

Dependent claims

A method of filling a depression of a workpiece which includes a semiconductor substrate and an insulating film formed on the semiconductor substrate, the depression passing through the insulating film and extending up to an inside of the semiconductor substrate, the method comprising:

forming a first thin film made of a semiconductor material along a wall surface which defines the depression;
performing gas phase doping on the first thin film;
by annealing the workpiece within a vessel, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed;
forming a second thin film made of a semiconductor material along the wall surface which defines the depression;
and
by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

3 more elements

A processing apparatus comprising:

a vessel;
a gas supply part configured to supply a first gas for forming a first thin film made of a semiconductor material, a second gas for forming a second thin film made of a semiconductor material and a third gas for use in gas phase doping, into the vessel;
a heating device configured to heat an internal space of the vessel;
and
a control part configured to control the gas supply part and the heating device,
wherein the control part is configured to execute a first control which causes the gas supply part to supply the first gas into the vessel, a second control which causes the gas supply part to supply the third gas into the vessel after the first control is executed, a third control which causes the heating device to heat the internal space of the vessel after the second control is executed, a fourth control which causes the gas supply part to supply the second gas into the vessel after the third control is executed, and a fifth control which causes the heating device to heat the internal space of the vessel after the fourth control is executed.

3 more elements

Dependencies are inferred from the claim text.

Depression Filling Method and Processing Apparatus

Life of this patent

Depression Filling Method and Processing Apparatus

Life of this patent

Abstract

Claims10