Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor

A manufacturing method of a field-stop reverse conducting insulated gate bipolar transistor, comprising the following steps:

• providing an N-type substrate comprising an N-type field stop layer on a back side thereof;
• performing a phase front process comprising:
• forming a high voltage-resisting structure surrounding a terminal structure on a front of the substrate of the field stop reverse conducting insulated gate bipolar transistor,
• forming a gate oxide layer on a front surface of an active region area of the substrate surrounded by the terminal structure,
• forming a polysilicon gate over a surface of the gate oxide layer,
• forming a P-well in the active region area on the front of the substrate,
• forming an N-type emitter in the P-well, forming a silicon oxide layer covering the front of the substrate and the polysilicon gates;
• forming a back P-type structure on a side of the field stop layer away from the substrate, and
• forming a plurality of polysilicon filling structures in the active region extending from the back P-type structure into the field stop layer;
• performing a second phase front process;
• which comprising photoetching and etching the silicon oxide layer, forming a contact hole for exposing a part of the P well and the emitter, filling an emitter metal structure in the contact hole, forming a passivation layer covering the silicon oxide layer and the emitter metal structure;
• and
• forming a back metal layer on the surfaces of the back P-type structure and the polysilicon filling structure away from the substrate.