Photodetecting device and manufacturing method thereof, and image sensor and manufacturing method thereof

An image sensor having pixels, each of the pixels comprising:

• a circuit substrate;
• and
• photodetecting devices disposed on the circuit substrate,
• each of the photodetecting devices comprising:
• a first insulation layer;
• a silicon layer disposed on the first insulation layer;
• a metal plug disposed through the first insulation layer and the silicon layer, the metal plug being connected to the circuit substrate;
• a silicon wire disposed on the silicon layer;
• a second insulation layer disposed on the silicon layer, the second insulation layer encompassing the silicon wire;
• and
• an electrode disposed on the second insulation layer, the electrode being connected to the silicon wire.

A method of manufacturing a photodetecting device, the method comprising:

• forming a catalyst layer on a first insulation layer;
• forming an amorphous silicon layer on the catalyst layer;
• forming a metal plug through the amorphous silicon layer, the catalyst layer, and the first insulation layer;
• forming a second insulation layer on the amorphous silicon layer;
• forming a hole in the second insulation layer to expose the amorphous silicon layer;
• forming an amorphous silicon wire by filling the hole with amorphous silicon;
• forming a silicon layer and a silicon wire by crystallizing the amorphous silicon layer and the amorphous silicon wire;
• and
• forming an electrode on the second insulation layer to connect the electrode to the silicon wire.

A method of manufacturing an image sensor, the method comprising:

• forming a first insulation layer on a circuit substrate;
• forming a catalyst layer on the first insulation layer;
• forming an amorphous silicon layer on the catalyst layer;
• forming a metal plug through the amorphous silicon layer, the catalyst layer, and the first insulation layer to connect the metal plug to the circuit substrate;
• forming a second insulation layer on the amorphous silicon layer;
• forming a hole in the second insulation layer to expose the amorphous silicon layer;
• forming an amorphous silicon wire by filling the hole with amorphous silicon;
• forming a silicon layer and a silicon wire by crystallizing the amorphous silicon layer and the amorphous silicon wire;
• and
• forming an electrode on the second insulation layer to connect the electrode to the silicon wire.

A method of manufacturing an image sensor, the method comprising:

• forming photodetecting devices;
• and
• transferring the photodetecting devices to form the photodetecting devices on a circuit substrate,
• the forming each of the photodetecting devices comprising:
• forming a catalyst layer on a first insulation layer;
• forming an amorphous silicon layer on the catalyst layer;
• forming a metal plug through the amorphous silicon layer, the catalyst layer, and the first insulation layer;
• forming a second insulation layer on the amorphous silicon layer;
• forming a hole in the second insulation layer to expose the amorphous silicon layer;
• forming an amorphous silicon wire by filling the hole with amorphous silicon;
• forming a silicon layer and a silicon wire by crystallizing the amorphous silicon layer and the amorphous silicon wire;
• and
• forming an electrode on the second insulation layer to connect the electrode to the silicon wire.