Memory Cells

A memory cell, comprising:

• a capacitor comprising two conductive capacitor electrodes having ferroelectric material there-between, the capacitor comprising an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material;
• and
• a parallel current leakage path from the one capacitor electrode to the other, the parallel current leakage path being circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path, the parallel current leakage path not being directly against the ferroelectric material.

A memory cell, comprising:

• a capacitor comprising two conductive capacitor electrodes having ferroelectric material there-between, the capacitor comprising an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material;
• and
• a parallel current leakage path from the one capacitor electrode to the other, the parallel current leakage path being circuit-parallel the intrinsic path, the parallel current leakage path having a dominant band gap of 0.4 eV to 5.0 eV, the parallel current leakage path not being directly against the ferroelectric material.

A memory cell, comprising:

• a capacitor comprising two conductive capacitor electrodes having ferroelectric material there-between, the capacitor comprising an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material;
• and
• a parallel current leakage path from the one capacitor electrode to the other, the parallel current leakage path being circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path, the parallel current leakage path comprising one or more of amorphous silicon, polycrystalline silicon, germanium, a metal dichalcogenide, silicon-rich silicon nitride, silicon-rich silicon oxide, and intrinsically dielectric material comprising at least one of SiO2 and Si3N4 doped with one or more of Ti, Ta, Nb, Mo, Sr, Y, Cr, Hf, Zr, and lanthanide series ions.