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US 2016/0240544 A1Published application
Non-volatile memory device
AssigneeSK hynix Inc.
InventorSung-Kun PARK
Life of this patent
Estimating the term…
Abstract
A non-volatile memory device includes: a floating gate having a plurality of fingers; a first coupling unit including an active control gate which overlaps with the floating gate in a vertical direction; a second coupling unit including a plurality of control plugs which overlap with the floating gate in a horizontal direction; and a control unit which electrically connects the active control gate to the control plugs and controls a bias to be applied to the active control gate.
Claims14
1-6. (canceled)
A non-volatile memory device, comprising:
- an active control gate formed in a substrate;
- a floating gate including a plurality of fingers extended in a first direction, which are formed over the substrate and divided to overlap with the active control gate;
- a plurality of control plugs extended in a first direction, which are formed over the active control gate and disposed adjacent to the fingers with gaps between them;
- and
- a diode, which electrically connects the active control gate to the control plugs and controls a bias applied to the active control gate.
2 more elements
A non-volatile memory device, comprising:
- a first well of a second conductive type, which is formed in a substrate;
- a second well, which is formed in the substrate and has a first conductive type in a complementary relationship to the second conductive type;
- a floating gate extended in a first direction, which is formed over the substrate and overlaps with the first and second wells, wherein the floating gate includes a plurality of fingers overlapping with the first well;
- a selection gate, which is formed over the substrate and overlaps with the second well;
- a plurality of control plugs extended in a first direction, which are formed over the first well and disposed adjacent to the fingers with gaps between them;
- sidewall spacers, which are formed on the sidewalls of the floating gate and the selection gate and gap-fill the gaps;
- and
- an impurity region of a second conductive type, which is formed in the first well below the control plug and electrically connects the control plug to the first well.
5 more elements
Dependencies are inferred from the claim text.