Methods for forming cobalt-copper selective fill for an interconnect

A method of processing a substrate, comprising:

• depositing a barrier layer within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features;
• depositing a cobalt layer to a first thickness atop the barrier layer within the first plurality of features and the second plurality of features, wherein the cobalt layer is deposited using a chemical vapor deposition process;
• transferring the substrate from a chemical vapor deposition process chamber to a physical vapor deposition process chamber;
• and
• heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a copper material on the substrate via a physical vapor deposition process to fill the second plurality of features.