Method of Forming an Interconnect Structure Having an Air Gap and Structure Thereof

A method for forming an interconnect structure, comprising:

• forming a first conductive line and a second conductive line within a dielectric layer over a substrate;
• forming a first etch stop layer over the first conductive line and the second conductive line;
• removing a portion of the first etch stop layer to expose a first corner of the first conductive line and a second corner of the second conductive line;
• removing a portion of the dielectric layer between the first conductive line and the second conductive line to form a first opening;
• depositing a second etch stop layer over the first etch stop layer and within the first opening;
• and
• depositing a dielectric material within the first opening, wherein the depositing the dielectric material seals a void at least partially within the first opening.

A method of manufacturing a semiconductor device, the method comprising:

• depositing a dielectric layer overlying a substrate;
• forming a metal interconnection layer within the dielectric layer, the metal interconnection layer comprising a first conductive feature and a second conductive feature;
• after the forming the metal interconnection layer, removing a portion of the dielectric layer between the first conductive feature and the second conductive feature, wherein the removing the portion of the dielectric layer also exposes a first corner of the first conductive feature and a second corner of the second conductive feature;
• depositing an etch stop layer over the first corner of the first conductive feature, the etch stop layer having a stepped profiled after the depositing the etch stop layer;
• and
• depositing a dielectric material adjacent to the etch stop layer between the first conductive feature and the second conductive feature, wherein the depositing the dielectric material is performed at a deposition rate of at least between about 1 nm/s and 10 nm/s to form an air gap in the dielectric material between the first conductive feature and the second conductive feature.