Gate electrode material residual removal process
AssigneeApplied Materials, Inc.
InventorsBhargav Citla, Chentsau Ying, Srinivas D. Nemani
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Abstract
The present disclosure provides methods for removing gate electrode residuals from a gate structure after a gate electrode patterning process. In one example, a method for forming high aspect ratio features in a gate electrode layer in a gate structure includes performing an surface treatment process on gate electrode residuals remaining on a gate structure disposed on a substrate, selectively forming a treated residual in the gate structure on the substrate with some untreated regions nearby in the gate structure, and performing a remote plasma residual removal process to remove the treated residual from the substrate.
Claims21
A method for forming high aspect ratio features in a gate electrode layer in a gate structure, the method comprising:
- performing an surface treatment process on gate electrode residuals remaining on a gate structure disposed on a substrate;
- selectively forming a treated residual on the gate structure on the substrate with untreated regions nearby on the gate structure;
- and
- performing a remote plasma residual removal process to remove the treated residual from the substrate.
A method for forming high aspect ratio features in a gate electrode layer in a gate structure, the method comprising:
- altering film properties of gate electrode residuals on a gate structure formed on a substrate;
- and
- selectively removing the gate electrode residuals from the substrate.
A method for forming high aspect ratio features in a gate electrode layer in a gate structure, the method comprising
- selectively treating gate electrode residuals remaining on a substrate after patterning a gate electrode layer disposed in a gate structure formed on a substrate;
- and
- selectively removing the treated gate electrode residuals from the gate structures by a remote plasma source generated from a gas mixture containing H2 gas.
Dependencies are inferred from the claim text.